| 摘要 |
PURPOSE:To set the optimum exposure conditions capable of estimating the pattern size of a mask only by measuring illuminance of size recognition patterns, by inserting monitoring patterns into the wafer or the mask to be exposed at the time of transfer exposure using the optical mask. CONSTITUTION:Illuminance is examined by applying a probe for measuring light source illuminance to the size recognition patterns 2 at the contact exposure of the wafer. When the optical mask pattern is formed as designed, the patterns 2 is adjusted so as to form 50% light to dark ratio and the measured illuminance of the patterns 2 is set to 1/2 of the illuminance of the light source. When the patterns 2 are 2mm. squares arranged like a grid, and the pattern size deviates by 0.1mum, the light to dark ratio increases or decreases by about 10%, and the exposure conditions can be decided exactly and easily by graphically expressing the relationship between the illuminance to be measured and the size. Accordingly, the size of the actual pattern 1 of the present optical mask can be estimated only by measuring the illuminance of the patterns 2 during the contact exposure and the optimum exposure conditions can be decided. |
