| 摘要 |
PURPOSE:To enable simultaneous reading of two informations by including a transistor connected to the base through a resistor to output voltage of a memory circuit in a reading circuit and controlling current by a control signal from the base. CONSTITUTION:Potential of a reading control line 11 is made higher than potential of a voltage source VR11. As a transistor (TR)Q13 becomes cnductive and voltage drop across a resistor R11 ceases, emitter potential of TRQ3 is transmitted to the base of TRQ11 through the resistor R11. At this time, as the reading circuit of other memory cell is in waiting state, potential of the reading line R11 is controlled by TRQ11, and the potential follows the emitter potential of TRQ3 of the memory circuit. Thus binary information can be read in the reading line R11 by simply heightening potential of a control line RC11. A reading circuit shown at right operates similarly. By arranging m bit n word of such memory cells, two informations can be read out simultaneously. |
