FORMATION OF THIN SEMICONDUCTOR FILM

摘要

PURPOSE:To form a thin semiconductor film of a large area from a seed in one direction when a so-called SOI film is formed, by radiating energy beams on the seed in part of an insulating film in one direction to deposit a semiconductor film and by carrying out epitaxial growth on the film. CONSTITUTION:A sample having an opening (seed) 3 in part of an insulating film (oxide film) 2 formed on a single crystal semiconductor substrate (silicon substrate) 1 is put in a gas contg. semiconductor atoms for forming a film. Energy beams (ion beams) 5 are radiated on the opening 3 in the insulating film 2 in one direction under heating to deposit a semiconductor film 4 on the film 2 from the opening 3. A semiconductor film is further formed on the film 4 by epitaxial growth.