发明名称 Method of manufacturing a semiconductor device
摘要 In the manufacture of a semiconductor device wherein a plurality of patterns are successively superimposed and printed on a semiconductor substrate, the invention offers a novel and useful method which includes (a) printing and forming on the semiconductor substrate a first pattern which includes a first alignment mark, (b) in forming a second pattern on the substrate, positioning and printing a second alignment mark contained in a second pattern relative to the first alignment mark on the substrate in such a manner that at least one part of the contour of the first mark is offset from that of the second mark, and is spaced a minute distance from it, and (c) in forming a third pattern on the substrate, positioning and printing a third alignment mark contained in a third pattern in such a manner that a part of the contour of the third alignment mark is offset from a part of the contour of the first alignment mark, and at least a part of the other portion of the contour of the third alignment mark is similarly offset from a part of the contour of the second alignment mark. The invention also offers marks for correctly positioning or registering masks formed by the abovedescribed steps.
申请公布号 US4423127(A) 申请公布日期 1983.12.27
申请号 US19810331477 申请日期 1981.12.16
申请人 FUJITSU LIMITED 发明人 FUJIMURA, SHUZO
分类号 H01L21/68;G03F9/00;H01L21/027;H01L21/30;H01L21/67;H01L23/544;(IPC1-7):G03C5/06 主分类号 H01L21/68
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