| 摘要 |
PURPOSE:To contrive not to generate latch-up by extinguishing a parasitic bi- polar transistor by a method wherein the device is so formed that at least one set of source and drain of a C-MOSFET form Schottky contact. CONSTITUTION:The n-well type C-MOSFET is composed of a p-channel MOSFET 33 formed on the n<-> well 32 of a p<-> substrate 31 and an n-channel MOSFET 34 formed in the substrate 31. Where, the source 40 and the drain 41 of the FET 33 are constituted so as to form Schottky contact between the well 32. The current flowing through the Schottky contact depends on the majority carrier of the semiconductor side, and the injection efficiency of the minority carrier is remarkably low. Thereby, the parasitic transistor is extinguished, and thus latch-up does not occur. As a result, the removal of a guard ring, etc. is enabled, and the transverse expansion of the well can be reduced, therefore the high density can be attained. |
