| 摘要 |
PURPOSE:To improve the yield of a semiconductor laser device at etching time by constructing a photowave guide formed between cleavage surfaces by the repetition of wide and narrow parts. CONSTITUTION:An N type InP clad layer 12, a non-doped InGAsP active layer 13, a non-doped P type InP clad layer 14 are sequentially grown on an N type InP substrate 11, an unnecessary part is removed by an etching method, and a waveguide is formed in a sawtooth shape. When the thus formed laser is energized, oscillating characteristics of preferable lateral mode can be obtained by narrowing part of the waveguide. Since the most of the waveguide can be widely formed, the yield at the etching time can be improved. |
