| 摘要 |
PURPOSE:To stably obtain a P type Si gate FET having no punch-through of B by a method wherein a single crystal Si gate electrode and a wiring are provided on the SiO2 film located on an Si substrate, while the same is doped and a source and drain layer is formed thereon at the same time. CONSTITUTION:A single crystal Si gate electrode 9 is provided on an SiO2 film 8, a B-ion is implanted in a single crystal Si 9 and, at the same time, a P type source and drain 7 is formed on an N type substrate 6. According to this constitution, as the gate Si is formed in single crystal, no punch-through of B is generated and the P-channel Si gate MOSFET can be stably manufactured without changing the conventional process to a large extent. |
