摘要 |
PURPOSE:To simply form an ultrafine groove in an integrated circuit which employs an oxide superconductor by utilizing selective etching effect on the contacting boundary with an upper metal. CONSTITUTION:A BPB superconductor thin film 1 is formed on a substrate 3, and chemically stable thin metal film 2 against etchant of BPB is formed in the pattern on the film 1. Then, this structure is immersed in diluted etchant. Thus, the etching of the BPB film can be accelerated by the battery reaction at the periphery of the upper metal 2, thereby forming an ultrafine groove. The shape of the groove can be controlled by the etching velocity and the time. Thereafter, the metal 2 which has the role of a resist is removed. |