Semiconductor IC and method of making the same.

摘要

In a semiconductor IC, a vertical pnp or npn transistor of a uniform characteristic and a high breakdown voltage is made by forming, for example, a p<->-collector region (39) in an n-type epitaxial region, an n-well base region (41) formed in the p<->-collector region (39) and a p-emitter region (42) formed in the n-well base region (41); and furthermore, for example, p<->-regions (40) and (49) are formed simultaneously with the p<->-collector region (39) and an n-region (53) is formed simultaneously with the n-well base region (41), thereby constituting IIL of superior characteristics and a high resistance device at the same time as forming of the vertical transistor without substantial increase of manufacturing steps; and in the similar way, by combining the p<->-region and n-region formed in the above-mentioned simultaneous steps with other region formed simultaneously with the forming of the vertical transistor, high hFE transistor, high speed vertical npn transistor, cross-over devices, p-channel and/or n-channel MOS transistors can be formed within limited manufacturing steps.