| 摘要 |
<p>A surface-emitting type semiconductor laser includes: a first mirror (102); an active layer (103) formed above the first mirror (102); a second mirror (104) formed above the active layer (103); a current constricting section (105) formed above or below the active layer (103); and a diffraction grating (110) formed above the active layer (103) and arranged in a plane perpendicular to a light emission direction, wherein a light confining region surrounded by the diffraction grating (110) is formed inside a region surrounded by the current constricting section (105) as viewed in a plan view from the light emission direction.</p> |
