| 摘要 |
PURPOSE:To improve the reliability of a protecting circuit in an MOS integrated circuit by forming a P type diffused layer outside an N type diffused layer, thereby eliminating the latchup of a circuit even if a high voltage is applied to the external terminal by preventing the diffusion of carrier. CONSTITUTION:Part of an N type diffused layer 9 connected to a high voltage side Vdd is cut, an elongated unit 7a which is elongated from a P type diffused layer 7 by utilizing the hole, and the unit 7a is constructed to guard the outside of the layer 9 which surrounds a P type diffused resistance layer 3. |
