| 摘要 |
PURPOSE:The titled stable protecting film, being prepared easily, not reducing electrical properties such as photosensitivity, etc., obtained by forming a BN layer on the surface layer of an amorphous silicon layer to which B is added. CONSTITUTION:In the last stage of a process wherein B2H4 gas as a B source is added to SiH4 gas and the gases are decomposed by plasma discharge using GD-CVD device, to form a B-containing amorphous silicon layer on a substrate, a ratio of the B2H6 gas to be added to the SiH4 gas is increased and simultaneously N2 gas is introduced to the device, so that a BN film having preferably 50-several hundred Angstrom film thickness is formed on the surface of the amorphous silicon layer. The BN film can be formed by the same process easily in a short time without changing conditions of the formation of the amorphous silicon film and form extremely physically stable protecting film because B and BN in the layer are continuous. |
