Formation of electrodes for magnetoresistive sensor

摘要

Electrodes for a magnetoresistive sensor can be formed easily by a method wherein a double-layer structure of Mo and Al on a film of a magnetoresistive material such as permalloy is formed to have a predetermined pattern, firstly by exposing an Al layer to a chemical etching solution or subjecting the Al layer to the ion-milling treatment to give said Al layer said pattern and then subjecting a Mo layer to the plasma etching or reactive sputter etching treatment to give said Mo layer said pattern.