发明名称 PROGRAMMABLE READ-ONLY MEMORY
摘要 <p>PURPOSE:To perform writing with a small current and less power consumption and to secure high reliability, by dividing a fuse into a heating and a cutting part, and using a high-resistance, high-fusion-point material for the heating part and a low-resistance, low-fusion-point material for the cutting part. CONSTITUTION:On a polycrystalline Si layer 1, an SiO2 layer 3 is formed selectively to connect the polycrystalline Si layer by an Al layer 2, and a protective glass layer 4 is adhered thereupon. To write information, a voltage is impressed between Al wiring layers 2a-2b, and thus a current is flowed. The polycrystalline Si has high resistance and a 1,700 deg.C high fusion point and the Al layer has low resistance and a 700 deg.C low fusion point, so Joule heat generated in the polycrystalline Si layer during the feeding raises the temperature of the Al layer 2, which is fused to be cut. Thus, the writing is performed with small electric power and the reliability is improved.</p>
申请公布号 JPS58158099(A) 申请公布日期 1983.09.20
申请号 JP19820039483 申请日期 1982.03.15
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 DATE SHIGERU;YOSHINO HIDEO;KOBAYASHI TOSHIO
分类号 G11C17/06;G11C17/14;G11C17/16 主分类号 G11C17/06
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