| 摘要 |
PURPOSE:To remarkably reduce the incidence of soft errors for the titled semiconductor device by a method wherein, in the case of flip-flop type memory consisting of an assembled FET, a metal layer whereon a prescribed potential was given is arranged on a memory cell through the intermediary of an insulating film. CONSTITUTION:An insulating film 10 and a metal layer 11, made of aluminum, tungsten, gold and the like, are added to the static memory using the load which has heretofore been in use as resistance, and the metal layer 11 is generally grounded. According to this constitution, the capacitance by insulating films 7 and 10 is generated between a memory node N15 and the metal layer 11. As a result, a capacitor CA is added between nodes N1 and N2, and the memory cpacity of the device is increased. As the memory capacity is increased as above, the amount of critical charge is increased too, and at the same time, the number of alpha particles and energy are attenuated by the insulating film 10 and the metal layer 11, thereby enabling to reduce the generation of soft errors. |
