| 摘要 |
PURPOSE:To provide a wiring path of high accuracy and reliability, by a method wherein Al is applied on a substrate, a photosensitive resin is formed thereon, an oxide film is produced on Al exposed surface by means of anode oxidation, the resin is removed, and reactive sputter etching performed using the oxide film as a mask. CONSTITUTION:An Al layer 12 is applied on a semiconductive substrate 11, and pattern of photosensitive resin 13 with center portion having an opening is formed. One end of the Al layer 12 is connected to an electrode 14. Constant- voltage forming process is performed using the Al layer 12 as anode and Pt installed separately as cathode and forming liquid of ethylene glycol including ammonium pentaborate of 10%, and exposed surface of the Al layer 12 is converted into non-porous Al2O3 layer 15. The resin 13 is removed and the exposed Al layer 12 is removed by means of sputter etching using the Al2O3 15 as a mask thereby Al layer 12' of prescribed pattern having the Al2O3 layer 15 on the surface is obtained. In this constitution, Al wiring path is formed at high pattern accuracy without roughness of the film surface. |
