| 摘要 |
In a process for producing a semiconductor component, a layer containing a high concentration of phosphorus is formed on a silicon substrate by high-temperature deposition or chemical low-temperature vapour deposition, phosphorus contained in the layer is diffused into the substrate by a high-temperature heat treatment, and the phosphorus-containing layer is converted into a phosphorus silicate glass layer (PSG layer) which is suitable for passivation purposes. The PSG layer has a phosphorus concentration of approximately 10-20 mol-%, taking P2O5 as a base. The diffusion process and the passivation are carried out simultaneously, thereby reducing the number of manufacturing steps. It is not necessary to form an oxide film on the PSG layer, with the result that electrodes can be formed by simple etching and the reliability of the component is improved. |
