| 摘要 |
PURPOSE:To obtain a semiconductor solar cell and a beam responding semiconductor device having high efficiency by laminating a semiconductor material having a large band gap onto the surface of a semiconductor material having a small band gap. CONSTITUTION:A P-N junction in amorphous Se is formed onto a substrate 1 consisting of a stainless material, a P-N junction in amorphous Si is shaped onto the junction, a P-N junction in amorphous SiC is further formed onto the junction, a transparent electrode 5 composed of indium oxide, etc. is formed onto the junction, and each P-N junction is isolated through mesa etching. The sequence of amorphous SiC>amorphous Si>amorphous Se is formed in the band gaps, and the semiconductor materials having a larger band gaps are formed to the surfaces close to the surface, thus enabling electrically converting an ultraviolet region in an uppermost surface layer, a visible ray region passing an uppermost surface in the next lower layer and an infrared region passing the uppermost surface and the next lower layer in a lowermost layer. |
