发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain a positive type photoresist composition for forming a fine image high in dimensional precision and having high sensitivity by using the condensation product of a mixture of m-cresol and specified phenols with formaldehyde as a substituted phenol novolak resin, and incorporating a specified amount of a photosensitizer in said resin. CONSTITUTION:The positive type photoresist composition comprises 100pts.wt. of the substituted phenol novolak resin and 25-60pts.wt. of the photosensitizer composed essentially of naphthoquinonediazide-sulfonate. Said novolak resin is obtained by polycondensing formaldehyde with the 90.0-99.5wt% mixture of m-cresol and at least one of the phenols represented by formula I (R1 is 1-6C alkyl, alkenyl, or the like, substituted at the o- or p-position) and at least one of the phenols amounting to 10.0-0.5wt% represented by formula II in which each of R2 and R3 is 1-6C alkyl, alkenyl, or the like, and R4 is H, 1-6C alkyl, alkenyl, or the like.
申请公布号 JPS62260146(A) 申请公布日期 1987.11.12
申请号 JP19860102616 申请日期 1986.05.02
申请人 TOKYO OHKA KOGYO CO LTD 发明人 ASAUMI SHINGO;OBARA HIDEKATSU;TANAKA HATSUYUKI;MIYABE MASANORI;NAKAYAMA TOSHIMASA
分类号 G03C1/72;G03F7/023;H01L21/027 主分类号 G03C1/72
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