| 摘要 |
PURPOSE:To remove stains effectively by applying an O2 plasma processing after a window is made in an insulating protection film by a dry etching processing. CONSTITUTION:The result 1 of the analysis of the surface of a semiconductor substrate immediately after a window is opened in an insulating protection film by a dry etching processing is compared with the result 2 of the analysis of the surface thereof which is subjected to an O2 plasma processing. This comparison makes us understand that the O2 plasma processing is effective for removing C, F, Mg, Na, etc. Actually, the semiconductor substrate subjected to the O2 plasma processing is excellently bonded to an Al film or an Al alloy film at the window. |
