| 摘要 |
PURPOSE:To improve the high frequency characteristic of a semiconductor device by constructing to have non-vertical property and hence a slope on the side surface of a mesa layer, thereby narrowing the gate length. CONSTITUTION:A channel layer 3 is formed on an arsenided gallium (GaAs) substrate 1, and a photoresist film 4 is coated on the layer 3, thereby forming a mask layer. When it is then etched with an etchant which contains 1-2% of hydrogen peroxide in aqueous solution having 2-8% of potassium hydroxide, the lateral etching distance becomes 3-4mum to the etching distance of longitudinal direction of 1mum, and the mesa layer 3' becomes oblique surface. After the film 4 is then removed, a gold-germanium layer 5 is formed on the source and drain regions. Thereafter, it is heat treated, thereby forming an alloying region 6 and completing a source and a drain. |
