| 摘要 |
Circuitry for presetting a bipolar random access memory includes switching transistors, responsive to an applied memory preset signal, for opening the circuit between the memory word lines and their respective current sources, for applying a positive voltage to the bottom word lines, for breaking the circuitry between bit line clamping circuits and their respective power sources, and for grounding the bit line pairs to drain all current from the bit line circuits. The preset circuitry also includes read/write control transistors coupled between each bit line and a Vcc source for steering the set of the memory cells upon removal of the preset signal.
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