| 摘要 |
PURPOSE:To increase a contact adhesion by mechanically eliminating oxide film or contamination on the surface of bonding area of metal thick film just before the bonding. CONSTITUTION:First, a substrate 17 is fixed to a fixing board 18 in order to bond a wire 13 to a copper pad 15. While a pad 15 and an IC chip 16 provided on the substrate 17 are heated by a heater 19, the wire 13 is bonded to the pad 15 by the bonding tool 21 of the ultrasonic wave bonding machine. In this case, an oxide film and contamination on the surface of pad 15 are eliminated by grinding mechanically the surface of bonding area of pad 15 with a grinder 20 mounted to the horn 21 of the bonding machine just before the bonding. Thereafter, the abovementioned bonding is carried out. As explained above, the bonding can be executed while heating the samples such as IC chip, copper pad, etc. and thereby a contact adhesion force can be increased by heating a sample. |
