| 摘要 |
PURPOSE:To detect and evaluate the state of the generation of the heat-treatment induced defect of a Si single crystal wafer in a nondestructive manner by preparing the X-ray diffraction image of the silicon wafer annealed through an X-ray diffraction topography. CONSTITUTION:A thermal oxide film is formed to the main surface section of the Si wafer, which uses a (100) crystal face or a (111) crystal face as a main surface, through thermal oxidation treatment. The Si wafer to which the thermal oxide film is shaped is annealed in a nitrogen atmosphere. The X-ray diffraction image is prepared through the X-ray diffraction topography employing the characteristic X-rays of molybdenum in the (220) crystal face of the Si wafer. |
