发明名称 MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the introduction of oxygen and moisture in a reaction furnace and to improve productivity and reproducibility thereof by a method wherein a chamber equipped with a mechanism for holding or moving a substrate and a substrate holder is coupled with a reaction tube. CONSTITUTION:A substrate and its holder 4 are placed under vacuum in a preliminary chamber 8 by a pump 38 and a valve 40 and, when the substrate and the holder are put in such a vacuous state that it is almost equivalent to the vacuum under which a chamber 1 of a reaction furnace 5 equipped with electrodes 2, 2', 17, 17', 25, 25' for plasma discharge and resistor heaters 3, 18, 24, and a first chamber 7 provided with a mechanism for moving the holder 4 into and out the reaction furnace are placed, the substrate and the holder are moved into the chamber 1 of the reaction furnace from a holder 11 by opening a valve 52. After the reaction, the holder 4 is moved to the holder 11 and then to a second chamber 30 by opening a shutter 32. After the substrate is made to react in the same manner, the holder 11 is moved to a holder 34 through a second preliminary chamber 35 under vacuum and placed under the atmospheric pressure by means of a port 31, before being taken out by opening a gate valve 36.
申请公布号 JPS5893321(A) 申请公布日期 1983.06.03
申请号 JP19810192292 申请日期 1981.11.30
申请人 HANDOUTAI ENERUGII KENKYUSHO:KK 发明人 YAMAZAKI SHIYUNPEI
分类号 H01L31/04;C23C16/54;H01L21/205 主分类号 H01L31/04
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