| 摘要 |
PURPOSE:To enhance manufacturing accuracy of wiring metal, by depositing a second metal layer on a substrate through a field oxide film and interlayer insulating layer, on the occasion of forming bonding electrodes on semiconductor substrate, and by covering entire surface with a passivation film, providing a through hole and by fixing a bonding electrode to said second metal wiring layer through such hole. CONSTITUTION:A field oxide film 2 and interlayer insulating film 3 are stacked on an Si substrate 1, and a second metal wiring layer 4 consisting of Al is formed thereon. Next, a bonding metal film 6 consisting of Al is also fixed thereon. At this time, a passivation film 5 is deposited on the wiring layer 4, a through hole is bored, and the metal film 6 is fixed on the wiring layer 4 exposed within such through hole. Thereby, the thick wiring film 4 can be formed, while the thin bonding metal film 6 is also formed. Accordingly, microminiature patterning of wiring metal can be realized. |
