| 摘要 |
PURPOSE:To contrive the reduction in short-circuit generating between the emitter and the base of the titled semiconductor device by a method wherein the side face of an emitter region is covered by an oxide film, and have a base electrode to come in contact with the point located deeper than the emitter and base junction. CONSTITUTION:A p type base region 23, an n type emitter region 25 and an emitter electrode 26 are provided in the n type epitaxial layer which was deposited on an n type buried layer 21. On the circumference of said region 25 and electrode 26, an insulating film 27 is formed, and the region 25 and the electrode 26 are isolated from a base electrode 28. Besides, a thick insulating film 24 is formed on the circumference of the region 23, and the circumference of the emitter and the base junction is covered by a film 27. In the structure of transistors as above, the emitter and base junction terminal A and the base electrode terminal B are sufficiently separated, the electrode 28 and the region 25 do not come in contact with each other. Besides, as the circumference of the region 23 is surrounded by an insulating film, the capacitance between the emitter and the base is reduced and high frequency characteristics can be improved. |
