| 摘要 |
PURPOSE:To facilitate alloying, and to increase the speed of signal transmission through a PtSi layer having small resistivity by simultaneously alloying a gate electrode and source-drain regions in a self-alignment manner while using an insulating layer formed to the side surface of the gate electrode as a mask. CONSTITUTION:Polycrystal silicon layers 22 are patterned in electrode shape, and SiO2 films 24 are grown to the side surfaces of the layers 22 while employing Si3N4 films 23 as masks and continued to a gate oxide film 9. The films 23 are removed, arsenic is injected, regions 1, 2, 3 functioning as the source-drain regions are prepared through a self-alignment system, one parts of the films 24 are removed together with the film 9, and films 10 are shaped. A Pt film 26 is attached, and silicon contacting with the film 26 is changed into platinum silicide layers 6, 8. The gate electrodes are formed in the double structure of polycrystal silicon layers 7 and the silicide layers 8 through the change into silicides. The Pt film 26 is removed, and wiring, etc. are executed. |
