NON-VOLATILE CHARGE MEMORY DISK

摘要

PURPOSE:To realize the recording and reproduction of high density and the mass production of disks, by forming a tracking mark pattern by forming an array pattern of a depletion region and non-depletion region on a semiconductor substrate with an ion implantation. CONSTITUTION:An acceptor is ion-implanted at the forming area of a depletion region on n type silicon substrate 1 and then activated to form a depletion region DA. Both a depletion region and a non-depletion region are formed to a nitride layer 3 on an oxide film 2 of a non volatile charge memory disk. An element containing an electrode part touches the surface of the layer 3 to turn a disk. Thus the electrostatic capacity produced between the electrode part of the element and the disk has a difference between the part corresponding to the depletion region formed to the substrate 1 and the part corresponding to the non-depletion region. Therefore a tracking pattern or a mark pattern which is formed on the substrate 1 from an array pattern of the depletion and non- depletion regions can be detected in the form of a change of the electrostatic capacity value.