| 摘要 |
PURPOSE:To obtain windows without overhang by a method wherein a polycrystalline Si film is formed on a diffused region, only the region corresponded to the electrode window is covered with an SiO2 film and heat-treated resulting in the change of the exposed Si film into a nitride film, and then removing only the Si film under the SiO2 film, when electrode windows surrounded by an insulating layer are formed on the impurity diffused region of a semiconductor device. CONSTITUTION:A thick field oxide film 13 is formed on the periphery of an Si substrate 11, a diffused region 12 such as a base is provided in the substrate 11 surrounded thereby, and a polycrystalline Si film 14 is adhered over the entire surface including the region and covered with an SiO2 film 15. Next, the film is survived only on the electrode window forming region by a photo etching, and the exposed Si film 14 is changed into a nitride film 16 serving as an insulating film by a thermal nitriding treatment. Thereafter, the film 15 is removed, an etching is performed by using a photo resist film 17 having an aperture 18 corresponded to the Si film 14 which is exposed thereunder resulting in the removal of the Si film 14, and window without overhang surrounded by the nitride film 16 is obtained. In the same manner, the film 17 is changed into a photo resist layer 20, and the same window is formed at the other position. |
