| 摘要 |
PURPOSE:To obtain the wafer for a semiconductor element in an even desired thickness without internal strains and enable to extremely easily perform an etching without the need of the control of the etching time, by forming a semiconductor thin layer of a different etchant on a semiconductor substrate and forming a support semiconductor layer and a semiconductor layer thereon, and thereafter etching-removing all the first semiconductor substrate. CONSTITUTION:It is constituted of an InP substrate 1, multi-layer epitaxial growing layer 2 having the double hetero structure normally of an InP and an InGaAsP and a contact layer, a thin InGaAsP layer 3 which is epitaxially grown on the InP substrate 1 and a thick InP layer 4 which is epitaxially grown on this InGaAsP layer 3 and to be an element support semiconductor layer, and the multi-layer epitaxial growing layer 2 is grown on the InP layer 3. When the InP substrate 1 is etched by hydrochloric acid, the etching stops in a state of the etching removal of all the InP substrate 1. Next, when the InGaAsP layer 3 is etching-removed by an etchant of sulfuric acids, the semiconductor wafer constituted of the desired InP layer 3 and multi-layer epitaxial growing layer 2 can be obtained. |
