| 摘要 |
PURPOSE:To obtain a photo detecting device with a high ON-OFF ratio and easy to be manufactured by forming a monolithic semi-conductive layer on the photo detecting section of a ferroelectric substance whereby the variation in spontaneous polarization of the ferroelectric substance due to the incident light is detected as a variation in conductivity of the semi-conductor. CONSTITUTION:A circular operative part 6 is formed on a Z-axis plate (the plate whose spontaneous polarization Ps is perpendicular to the primary surface) of, for instance, LiTaO3 by means of etching or the like. The reflection surface of the operative part 6 includes an insulating layer 7 of SiO2 or Si3N4, on which an amorphous silicon layer 8 is formed. Cross electrodes 9, 9' are then provided on the layer 8 of Al or the like. The bottom surface of the operative part 6 is formed with a black light absorbing electrode 10 adhered thereto with gold or platinum, a part of said electrode being covered to form an aluminum electrode 11 on the substrate 5 on side opposite to the layers 7, 8. The light 4 is allowed to enter the light detecting device through the electrode 10, whereupon electric current produced between the electrodes 9, 9' is detected. This enables easy manufacture of a device with a high light detecting efficiency. |
