发明名称 MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make a high-quality compound semiconductor device with good yield by coating and covering a life time killer impurity on the desired region surface of a semiconductor chip formed a plurality of elements by a lift off method untilizing a photosensitive agent. CONSTITUTION:A photosensitive agent 14 is applied to a semiconductor chip 10 formed a plurality of elements and after providing an opening at the predetermined region surface between elements, a heavy metal material 8 for life time killer such as Au, Pt or the like is coated and covered on the whole surface. After removing the photosensitive agent 14 by pyrolysis, the heavy metal material 8 is peeled off by utilizing an adhesive tape to leave the heavy metal material at the opening section 7 only and the life time of a desired region is shortened by diffusing the metal in a substrate. This can control the life time of the desired region with good accurary and a high-quality compound semiconductor device can be made with good yield.
申请公布号 JPS57211776(A) 申请公布日期 1982.12.25
申请号 JP19810097210 申请日期 1981.06.23
申请人 NIPPON DENKI KK 发明人 AOKI MASAHIKO
分类号 H01L21/22;H01L21/322;H01L29/74 主分类号 H01L21/22
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