| 摘要 |
PURPOSE:To form an Si single crystal on the oxide single crystal of an isometric system containing Ce or its homolog or a tetragonal or orthorhombic system slightly deformed from the isometric system by forming the oxide single crystal to SiO2 on an Si substrate. CONSTITUTION:CeO2 2 is shaped on an Si substrate 1 by high-frequency plasma in the atmosphere of O2 and Ce vapor, a resist mask 3 is coated and O ions are implanted, and SiO2 4 is closely formed under the film 2 through heat treatment. The CeO2 is close to Si in a lattice constant (within 0.99-1.01) and has the isometric system and a face-centered lattice. Consequently, the Si single crystal layer 5 can be formed onto the layer 2 in epitaxial process. A resist mask 7 is coated and O ions are implanted selectively to the layer 5 and SiO2 8 is formed through heat treatment, P ions are implanted to the substrate 1 while penetrating the layer 5, a source 9 and a drain 10 are shaped through heat treatment, and a gate electrode 11 and wiring 12 are given n type conductivity. According to this constitution, the single crystal Si is formed onto the insulting film in epitaxial process, and the semiconductor device can be manufactured. |
