| 摘要 |
PURPOSE:To suppress the generation of an inversion layer under a glassivation layer as well as to obtain the device with excellent electric characteristics by a method wherein a high impurity density region is interposed between the cathode region, which constitutes the semiconductor device, and the glassivation layer which surrounds the cathode region. CONSTITUTION:An N type region 20, surrounded by a P type layer 21, is formed by diffusion in the P type layer 21, and a P type gate region 22 is provided in the region 20. Then, an N type cathode region 23 is formed by diffusion in the region 22, and a glassivation layer 25 is formed on the region ranging from layers 22, 20 and 21 by surrounding the region 23 at the same time. Then, a P<+> type region 24, which surrounds the region 23 by positioning itself between the region 23 and the layer 25 and also surrounds the outer circumference of the layer 25, is formed by diffusion, and an oxide film 26 is coated on the entire surface while the surface of the layer 25 is being exposed. Then, a window is provided on the film 26, a cathode electrode 18 is installed on the region 23, a gate electrode 27 is installed on the region 24, and an anode electrode 29 is coated on the entire back side of the layer 21. Through these procedures, the generation of an inversion layer at the part directly under the layer 25 when an inverse voltage is applied between the electrodes 28 and 29 can be suppressed, and the electric characteristics of the titled device can also be improved. |
