| 摘要 |
PURPOSE:To reduce the loss in a gate input power and to increase the switching speed, by connecting a complementary MOSFET between the anode and gate and between the gate and cathode of a thyristor. CONSTITUTION:In a thyristor of 4-layer construction bonding P type semiconductors 1 and 3 and N type semiconductors 2 and 4 alternately, a P channel MOSFET21 is provided between the anode and gate and an N channel MOSFET 22 is located between the gate and cathode and an input voltage is applied to the gate of both the MOSFETs in common. When a voltage with which the MOSFET21 turns on and the MOSFET22 turns off as an on-voltage is applied, a gate current flows through the MOSFET21 and the thyristor turns on. When the MOSFET21 turns off and the MOSFET22 turns on inversely, the gate and cathode are shortened to turn off the thyristor. |
