发明名称 Write mode circuitry for photovoltaic ferroelectric memory cell
摘要 Non-volatile semiconductor matrix random access and electrically alterable programmable read-only memories are disclosed. Each memory cell of the matrix memory includes a photovoltaic ferroelectric element which is remanently polarized with a write signal, and which when illuminated, produces a photovoltage which causes a field effect transistor to assume one of two states. Variable impedance means, for example, at least a diode or a breakdown diode is connected in each cell for providing a low impedance when the write gate pulse is applied to the photovoltaic ferroelectric element and for providing a high impedance when the photovoltage produced by the photovoltaic ferroelectric element is applied to the field effect transistor gate. If power to the memory is lost, by illuminating the photovoltaic ferroelectric element, the field effect transistor may be caused to assume the state which it was in before loss of power.
申请公布号 US4360896(A) 申请公布日期 1982.11.23
申请号 US19810230177 申请日期 1981.01.30
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 BRODY, PHILIP S.
分类号 G11C11/22;G11C11/42;G11C16/04;H01L27/115;(IPC1-7):G11C11/22 主分类号 G11C11/22
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