Semiconductor surface acoustic wave device

摘要

Surface acoustic wave devices with selectable performance parameters such as having a temperature coefficient of zero, may be fabricated employing a monocrystalline semiconductor substrate with a combination of appropriate doping and crystallographic orientation both with respect to the surface and the direction of propagation. Monocrystalline silicon doped with phosphorous to the order of 2x1019 atoms per cc, exhibits a zero temperature coefficient at 300 DEG Kelvin for acoustic waves propagating in the [110] crystallographic direction on a [110] substrate.