| 摘要 |
PURPOSE:To manufacture the field effect breakdown transistor with less leakage current by a method wherein the P layer and N layer are arranged side by side on the insulating substrate and the conductive gate electrode is provided on the boudary through the intermediary of the insulating film. CONSTITUTION:The N type and P type Si layers 12 and 13 are arranged side by side on the sapphire 11 and the P layer 13 and the N layer 12 respectively maintain the zero potential and the positive potential VS. When the breakdown voltage at the P-N junction 14 is VBD and the signal potential of the gate 16 is VG, if VS>VBD, VS-VG<VBD, the breakdown current from the electrode 12a when VG=0 is flown into the electrode 13a through the junction surface 14 and the P layer 13 making FET normally closed with the breakdown current flowing no leakage current. When VG>0, if VS<VBD, VS-VG>VBD, FET is normally opened. In either cases, the current due to the junction breakdown flowing no leakage current, the conventional channel between the layers 12 and 13 is made needless miniaturizing the device. |
