| 摘要 |
With the light receiving element group (9), switching devices for vertical protrusion(91-9m), vertical scanning circuit(3), vertical output line(10), horizontally protrusion switching devices(81-8m), and horizontal scanning circuit(2), solid-state image sensor has MOSFET for switching connected other terminal of previous vertical output lines for excess carrier removal by changing the electrical potential of the control terminal of the previous vertically protrusion switching devices during the blank period, so this solid-state image sensor does not show the Blooming phenomena.
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