| 摘要 |
PURPOSE:To make it possible to prevent the occurrence of the deterioration and cracks of a grown crystal, by annealing a grown single crystal part with an auxiliary heating means in a seed crystal growing apparatus. CONSTITUTION:A seed crystal of a single crystal is mounted on a platinum plate 78 at the tip of a rotating and driving shaft 72, and a raw polycrystalline material 83 is mounted on a rotating and driving shaft 73. The rotating and driving shafts 72 and 73 are set to position a joined part of the seed crystal to the polycrystalline material 83 at a focus (E2) of an infrared heating chamber 2, and the joined part is heated to be a molten state by infrared rays 5 from a lamp 3. The rotating and driving shafts 72 and 73 are lowered slowly while rotated and driven mutually in the opposite directions, and a molten part 84 of a material 4 to be treated is relatively lifted. Thus, a single crystal part 80 is grown under the molten part 84 and then introduced into a heat generating part 14 of the subheater 13 gradually and annealed. The heat generating part 14 is connected to an electrode 58 through an inserting hole 56 provided in a support 55. |
