发明名称 SURFACE ACOUSTIC WAVE RESONATOR
摘要 PURPOSE:To improve temperature characteristics, to increase a Q factor, and to lower a subordinate resonance level by sticking an Al electrode, whose film thickness is >=1.5% of surface acoustic wave wavelength, to a quartz substrate which is treated by rotary Y cutting and allows a surface wave to propagate in an X-axis direction. CONSTITUTION:Busbar electrode 2 and 3 are provided on the main surface of a quartz substrate 1. An interdigital electrode consists of many opposing comb- shaped fingers 4 and 5 which are extended alternately from the electrodes 2 and 3 in parallel. The quartz substrate is treated by rotary Y cutting, and a surface wave propagates in the X-axis direction. Further, the interdigital electrode uses Al and its film thickness is >=1.5% of the wavelength of the surface acoustic wave. As a result, a sufficiently large Q factor is obtained without increasing the number N of couples of electrode fingers, and while temperature characteristics are improved, a subordinate resonance level is lowered.
申请公布号 JPS57170615(A) 申请公布日期 1982.10.20
申请号 JP19810056710 申请日期 1981.04.14
申请人 TOUYOU TSUUSHINKI KK 发明人 NAKAZAWA YUUZOU;ONO KAZUO;MORITA TAKAO;TANAKA MASAKI
分类号 H03H9/145;H03H3/08;H03H9/02;H03H9/25;(IPC1-7):03H9/25 主分类号 H03H9/145
代理机构 代理人
主权项
地址