| 摘要 |
PURPOSE:To obtain a solar battery inexpensively with good conversion efficiency by reducing the number of steps by employing a sapphire as a window layer for a substrate to grow an active layer. CONSTITUTION:A defect exists in the vicinity of a boundary with a sapphire substrate due to the unmatching of lattice constant, thereby exhibiting P type particularly in the GaAs having high conversion efficiency of a semiconductor layer of the substrate. Accordingly, when a P type GaAs and then N type GaAs are sequentially grown in vapor phase in the layer contacting with the sapphire, the reduction of the conversion efficiency can be prevented. Further, an aluminum reflection layer is laminated to reflect the incident light, thereby contributing again to a generation and enhancing the light using efficiency. According to this structure, the light is efficiently introduced to a p-n junction, the crystallinity of the operation layer is improved, and the step of contacting the sapphire window layer with the operation layer can be eliminated. |
