| 摘要 |
PURPOSE:To form a magnetoresistance effect element having preferable characteristics with simple steps by employing an InSb series composite crystalline semiconductor in the specific range of a ratio of In to Sb. CONSTITUTION:A substrate 1 such as mica or the like is disposed in a deposition device, is heated by heating means 5, 5' while controlling it with thermocouple 3, while In and Sb are respectively added to the raw material boats 4, 4', the raw materials are heated by heating means 6, 6', the In and Sb are deposited on the substrate, thereby forming an InSb series composite crystalline semiconductor film of the range of 1.10-1.70 of the ratio of In/Sb. In this manner, a semiconductor having preferable crystallinity and magnetic characteristics can be obtained with simple condition control and ready manufacturing steps, thereby improving the characteristics of a Hall element or a magnetoresistance effect element. |
