| 摘要 |
Method of zone melting a semiconductor rod includes displacing an end holder of the vertically held rod transversely to the rod axis, continuously displacing the other end holder vertically so as to feed a rod portion, having a diameter greater than the inner diameter of an annular heating device surrounding the rod and forming a melting zone therein, into the melting zone, forming a diametrical constriction in the melting zone, displacing the one end holder vertically and rotating it until the rod portion located between it and the melting zone is formed to a specific diameter larger than the inner diameter of the heating device and, after forming the rod portion to the specific cross section, vertically displacing the end holders elative to the heating device. |
