| 摘要 |
<p>A semiconductor programmable read only memory device containing a plurality of memory cells is constructed using zener diodes as the programming means of each cell. A desired cell is programmed by shorting out the zener diode by causing excessive current flow during zener breakdown. Cells utilizing zener diodes as the programming means are smaller than prior art cells utilizing transistors as the programming means. Cells utilizing zener diodes as the programming means require relatively small amounts of current during programming, reducing the size of the access device required, and thus further reducing the size of the cell. The zener diodes used as the programming means of this invention are manufactured without additional process steps over conventional MOS process techniques.</p> |
