Semiconductor device

摘要

A semiconductor device has a dynamic memory cell comprising a MOS transistor on a semiconductor substrate (10), a bump or contact nipple (54) connected to the drain electrode of the transistor and made of a low-melting material, a capacitor on a sapphire substrate (60) and a further bump or contact nipple (74) connected to an electrode of the capacitor and made of a low-melting material. The semiconductor substrate (10) is connected to the sapphire substrate (60) in such a way that the bumps or contact nipples (54, 74) are opposite one another and are joined or welded together.