| 摘要 |
PURPOSE:To control impurity doping easily, by using a primary evaporation source composed of CdxTe1-x and a secondary evaporation source composed of CdTe and impurity to be doped simultaneously to form a CdTe film by means of evaporation. CONSTITUTION:A primary evaporation source is composed of CdxTe1-x (0<=X<= 1), as an evaporation source for a CdTe film in a thin-film photoelectric transducer. A secondary evaporation source is composed of CdTe and impurity to be doped in CdTe. An N- or P-film of CdTe is deposited with primary and secondary evaporation sources simultaneously. In this case, if the CdTe film is made to be of P type, at least one impurity will be chosen and included among lithium, copper, silver, gold, lead, phosphor, and antimony with X<0.5. If it is made to be of N type, at least one impurity will be selected and included from among indium, aluminium, and iodine with X>0.5. |
