| 摘要 |
PURPOSE:To extract light emitted from the inside of the light-emitting element to the outside without reflection on a light projecting surface by inclining a light- emitting region in a striped shape and limiting the region in the end surface light- emitting type light-emitting element. CONSTITUTION:An N type Al0.3Ga0.7As layer 2, an N type Al0.03Ga0.97As active layer 3, a P type Al0.3Ga0.7As layer 4, an N type GaAs layer 5, a P type impurity diffusion region 6 and a SiO2 film 7 having a striped window so as to function as a current limit region are formed on an N type GaAs substrate 1, and a P electrode 8 and an N electrode 9 are further shaped. Here, a current injection region has an angle (pi/2-theta) to the light projecting surface, and an angle theta is set so as to satisfy a formula of theta tan<-1>(n1/n) when a refractive index of the light-emitting region is n and a refractive index of a medium adjoining to the light projecting surface is n1. When the angle theta is set to approximately 16 deg., it is close to a pre-coaster angle to TE polarized wave. |
