| 摘要 |
PURPOSE:To improve the current amplification factor of a semiconductor device with low emitter current region by removing the part exposed on the surface of a substrate of emitter and base junction to form a groove and covering the surface of the substrate including the groove with clean oxidized film. CONSTITUTION:An n<+> type buried layer 102 is formed on a p type Si substrate 101, and an n type epitaxial layer 103, a p<+> type isolation region 104, a p<+> type base region 108, an n<+> type emitter region 113, etc. to become collector region are formed on the substrate 101. Then, the part exposed on the surface of the layer 103 of the emitter and base junction is selectively removed, and an annular groove 113 is formed. Then, a clean oxidized film 114 is formed on the surface of the layer 103 including the groove 113. Thus, the recombination center density in the emitter and base junction depletion layer caused by the crystalline defect or the like can be remarkably reduced. Consequently, it can prevent the increase in the base current at the operating time of the n-p-n transistor, and the current amplification factor hFE can be remarkably improved. |
